Tunneling electroresistance induced by interfacial phase transitions in ultrathin oxide heterostructures.

Mechanically-induced resistive switching in ferroelectric tunnel junctions.

Recent advances in atomic-precision processing of oxide ferroelectrics-materials with a stable polarization that can be switched by an external electric field-have generated considerable interest due to rich physics associated with their fundamental properties and high potential for application in devices with enhanced functionality. One of the particularly promising phenomena is the tunneling ...

Ultrathin limit of exchange bias coupling at oxide multiferroic/ferromagnetic interfaces.

Exchange bias coupling at the multiferroic- ferromagnetic interface in BiFeO₃ /La₀.₇ Sr₀.₃ MnO₃ heterostructures exhibits a critical thickness for ultrathin BiFeO₃ layers of 5 unit cells (2 nm). Linear dichroism measurements demonstrate the dependence on the BiFeO₃ layer thickness with a strong reduction for ultrathin layers, indicating diminished antiferromagnetic ordering that prevents interf...

Photoemission measurements of Ultrathin SiO2 film at low take-off angles

The surface and interfacial analysis of silicon oxide film on silicon substrate is particularly crucial in the nano-electronic devices. For this purpose, series of experiments have been demonstrated to grow oxide film on Si (111) substrate. Then these films have been used to study the structure of the film by using X-ray photo emission spectroscopy (XPS) technique. The obtained results indicate...

A giant tunneling electroresistance effect driven by electrically controlled spin valve at a complex oxide interface

Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures

Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplo...